Heavy doping of CdTe single crystals by Cr ion implantation
Artykuł naukowy w czasopiśmie recenzowanyCzasopismo: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS (ISSN: 0168-583X)
Współautorzy: Volodymyr D. Popovych, Roman Böttger, Rene Heller, Shengqiang Zhou, Mariusz Bester, Bogumił Cieniek, Robert Mroczka, Piotr Sagan, Marian Kuźma
Rok wydania: 2018
Tom: 419
Strony od-do: 26-31
DOI: 10.1016/j.nimb.2018.01.019
Cytowanie w formacie Bibtex:
@article{1,
author = "Rafał Łopucki and Volodymyr D. Popovych and Roman Böttger and Rene Heller and Shengqiang Zhou and Mariusz Bester and Bogumił Cieniek and Robert Mroczka and Piotr Sagan and Marian Kuźma",
title = "Heavy doping of CdTe single crystals by Cr ion implantation",
journal = "NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS",
year = "2018",
pages = "26-31"
}
Cytowanie w formacie APA:
Łopucki, R. and Volodymyr D. Popovych and Roman Böttger and Rene Heller and Shengqiang Zhou and Mariusz Bester and Bogumił Cieniek and Robert Mroczka and Piotr Sagan and Marian Kuźma(2018). Heavy doping of CdTe single crystals by Cr ion implantation. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 26-31.