Determination of carrier lifetime and diffusion length in Al-doped 4H-SiC epilayers by time-resolved optical techniques
Artykuł naukowy w czasopiśmie recenzowanyCzasopismo: J. Phys. D: Apll. Phys 48 Współautorzy: Gediminas Liaugaudas Donatas Dargis Roxana Arvinte Marcin Zielinski Kęstutis Jarašiūnas
Rok wydania: 2014
Strony od-do: 43-47
Cytowanie w formacie Bibtex:
@article{1,
author = "Paweł Kwaśnicki and Gediminas Liaugaudas Donatas Dargis Roxana Arvinte Marcin Zielinski Kęstutis Jarašiūnas",
title = "Determination of carrier lifetime and diffusion length in Al-doped 4H-SiC epilayers by time-resolved optical techniques ",
journal = "J. Phys. D: Apll. Phys 48",
year = "2014",
pages = "43-47"
}
Cytowanie w formacie APA:
Kwaśnicki, P. and Gediminas Liaugaudas Donatas Dargis Roxana Arvinte Marcin Zielinski Kęstutis Jarašiūnas(2014). Determination of carrier lifetime and diffusion length in Al-doped 4H-SiC epilayers by time-resolved optical techniques . J. Phys. D: Apll. Phys 48, 43-47.